IPG20N04S4L08ATMA1 vs IPG20N04S4L08AATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPG20N04S4L08ATMA1 disebabkan oleh Infineon dan IPG20N04S4L08AATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IPG20N04S4L08AATMA1 IPG20N04S4L08AATMA1 - Dual N-Ch 40V 8.2mΩ MOSFET | Infineon

IPG20N04S4L08AATMA1 - Dual N-Ch 40V 8.2mΩ MOSFET | Infineon

IPG20N04S4L08AATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IPG20N04S4L08ATMA1 IPG20N04S4L08AATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number IPG20N04S4L08ATMA1 —
FET Type 2 N-Channel (Dual) Dual N-Channel
FET Feature Logic Level Gate —
Drain-to-Source Voltage (Vdss) 40 V —
Continuous Drain Current (Id) @ 25°C 20 A —
On-Resistance Rds(on) max @ Vgs=10V, Id=17A 8.2 mΩ —
Power Dissipation (Pd) 54 W —
Suhu Operasi -55°C to +175°C —
Kemasan / Case PG-TDSON-8-4 (TDSON-8) —
Jenis Pemasangan Surface Mount Surface Mount
Series OptiMOS™-T2, Automotive, AEC-Q101 —
Aras MSL MSL1 (per JEDEC J-STD-020, up to 260°C peak reflow) —
Avalanche Tested 100% Avalanche Tested —
RoHS / Green RoHS Compliant, Green Product —
Part Status Active —
Technology — OptiMOS-T2 (Logic Level)
Drain-to-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID) @ TC=25°C — 20 A (per channel)
On-Resistance R<sub>DS(on)</sub> max @ VGS=10V — 8.2 mΩ
Gate Threshold Voltage V<sub>GS(th)</sub> typ — 1.7 V
Gate Drive (Logic Level) — 4.5 V
Power Dissipation (PD) @ TC=25°C — 54 W
Suhu Hubungan Operasi — -55°C to +175°C
Kemasan — PG-TDSON-8-10 (Wettable Flank)
AEC-Q101 Qualification — Yes
Peak Reflow Temperature — 260°C
Avalanche Rated — Yes (100% tested)
RoHS / REACH — Compliant (Green Product)
AOI Compatible — Yes (Wettable Flank)

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