IPG20N04S4L11ATMA1 vs IPG20N04S4L08ATMA1 Perbandingan

Perbandingan bersamaan detil IPG20N04S4L11ATMA1 dari Infineon dan IPG20N04S4L08ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPG20N04S4L11ATMA1 IPG20N04S4L08ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Logic Level Gate Logic Level Gate
Drain-to-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) @ 25C 20 A per channel —
R<sub>DS(on)</sub> Max @ VGS=10V, ID=17A 11.6 mOhm —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] —
Maximum Power Dissipation (PD) 41 W —
Rentang Suhu Kerja -55C to +175C —
Paket PG-TDSON-8-4 (Super S08 / 8-TDSON EP) —
Tipe Mounting Surface Mount Surface Mount
Level MSL 1 (260C peak reflow) MSL1 (per JEDEC J-STD-020, up to 260°C peak reflow)
Avalanche Rating 100% Avalanche Tested —
Automotive Qualification AEC-Q101 Qualified —
Status RoHS Compliant (Green Product) —
Technology OptiMOS-T2 trench —
Manufacturer — Infineon Technologies
Part Number — IPG20N04S4L08ATMA1
Drain-to-Source Voltage (Vdss) — 40 V
Continuous Drain Current (Id) @ 25°C — 20 A
On-Resistance Rds(on) max @ Vgs=10V, Id=17A — 8.2 mΩ
Power Dissipation (Pd) — 54 W
Suhu Kerja — -55°C to +175°C
Paket / Case — PG-TDSON-8-4 (TDSON-8)
Series — OptiMOS™-T2, Automotive, AEC-Q101
Avalanche Tested — 100% Avalanche Tested
RoHS / Green — RoHS Compliant, Green Product
Part Status — Active

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