IPG20N04S4L11ATMA1 vs IPG20N04S4L08ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPG20N04S4L11ATMA1 disebabkan oleh Infineon dan IPG20N04S4L08ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPG20N04S4L11ATMA1 IPG20N04S4L08ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Logic Level Gate Logic Level Gate
Drain-to-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) @ 25C 20 A per channel —
R<sub>DS(on)</sub> Max @ VGS=10V, ID=17A 11.6 mOhm —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] —
Maximum Power Dissipation (PD) 41 W —
Gambaran Suhu Operasi -55C to +175C —
Kemasan PG-TDSON-8-4 (Super S08 / 8-TDSON EP) —
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL 1 (260C peak reflow) MSL1 (per JEDEC J-STD-020, up to 260°C peak reflow)
Avalanche Rating 100% Avalanche Tested —
Automotive Qualification AEC-Q101 Qualified —
Status RoHS Compliant (Green Product) —
Technology OptiMOS-T2 trench —
Manufacturer — Infineon Technologies
Part Number — IPG20N04S4L08ATMA1
Drain-to-Source Voltage (Vdss) — 40 V
Continuous Drain Current (Id) @ 25°C — 20 A
On-Resistance Rds(on) max @ Vgs=10V, Id=17A — 8.2 mΩ
Power Dissipation (Pd) — 54 W
Suhu Operasi — -55°C to +175°C
Kemasan / Case — PG-TDSON-8-4 (TDSON-8)
Series — OptiMOS™-T2, Automotive, AEC-Q101
Avalanche Tested — 100% Avalanche Tested
RoHS / Green — RoHS Compliant, Green Product
Part Status — Active

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