IPG20N04S4L11ATMA1 vs IPG20N06S2L65AATMA1 Perbandingan
Perbandingan bersamaan detil IPG20N04S4L11ATMA1 dari Infineon dan IPG20N06S2L65AATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IPG20N04S4L11ATMA1 - 40V 20A Dual N-Ch OptiMOS MOSFET | Infineon
IPG20N04S4L11ATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IPG20N04S4L11ATMA1 | IPG20N06S2L65AATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | 2 N-Channel (Dual) | Dual N-Channel (Half Bridge / Independent) |
| FET Feature | Logic Level Gate | — |
| Drain-to-Source Voltage (VDS) | 40 V | 55 V |
| Continuous Drain Current (ID) @ 25C | 20 A per channel | — |
| R<sub>DS(on)</sub> Max @ VGS=10V, ID=17A | 11.6 mOhm | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Maximum Power Dissipation (PD) | 41 W | — |
| Rentang Suhu Kerja | -55C to +175C | — |
| Paket | PG-TDSON-8-4 (Super S08 / 8-TDSON EP) | PG-TDSON-8-10 (TDSON-8 EP, wettable flank) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Level MSL | 1 (260C peak reflow) | MSL1 (peak reflow 260 C) |
| Avalanche Rating | 100% Avalanche Tested | — |
| Automotive Qualification | AEC-Q101 Qualified | — |
| Status RoHS | Compliant (Green Product) | Compliant (Green Product) |
| Technology | OptiMOS-T2 trench | OptiMOS Trench MOSFET |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS |
| Continuous Drain Current (ID) | — | 20 A (per channel) |
| Power Dissipation (PD) | — | 43 W |
| Gate Threshold (VGS(th)) | — | Logic-Level |
| Suhu Kerja | — | -55 C to +175 C |
| AEC-Q101 Qualification | — | Yes |
| Avalanche Tested | — | 100% (per datasheet) |
| AOI Compatible | — | Yes (wettable flank) |