IPG20N04S4L11ATMA1 vs IPG20N10S4L35ATMA1 Perbandingan

Perbandingan bersamaan detil IPG20N04S4L11ATMA1 dari Infineon dan IPG20N10S4L35ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IPG20N10S4L35ATMA1 IPG20N10S4L35ATMA1 - 100V Dual N-Ch MOSFET, 35mΩ | Infineon

IPG20N10S4L35ATMA1 - 100V Dual N-Ch MOSFET, 35mΩ | Infineon

IPG20N10S4L35ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IPG20N04S4L11ATMA1 IPG20N10S4L35ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Logic Level Gate Logic Level Gate
Drain-to-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) @ 25C 20 A per channel —
R<sub>DS(on)</sub> Max @ VGS=10V, ID=17A 11.6 mOhm —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] —
Maximum Power Dissipation (PD) 41 W —
Rentang Suhu Kerja -55C to +175C —
Paket PG-TDSON-8-4 (Super S08 / 8-TDSON EP) —
Tipe Mounting Surface Mount Surface Mount
Level MSL 1 (260C peak reflow) MSL1 (up to 260°C peak reflow)
Avalanche Rating 100% Avalanche Tested —
Automotive Qualification AEC-Q101 Qualified AEC-Q101
Status RoHS Compliant (Green Product) Compliant (Green Product)
Technology OptiMOS-T2 trench —
Manufacturer — Infineon Technologies
Part Number — IPG20N10S4L35ATMA1
Drain-to-Source Voltage (V<sub>DSS</sub>) — 100 V
Continuous Drain Current (I<sub>D</sub>) at 25°C — 20 A
R<sub>DS(on)</sub> Max — 35 mΩ @ V<sub>GS</sub>=10 V, I<sub>D</sub>=17 A
Gate Threshold (V<sub>GS(th)</sub>) — [DATA_NEEDED: typical Vgs(th) value]
Power Dissipation (P<sub>D</sub>) — 43 W
Suhu Kerja — 175°C max junction
Paket / Case — PG-TDSON-8-4 (8-Pin TDSON EP)
Series — OptiMOS™, Automotive
Avalanche Rated — 100% Avalanche Tested

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon