IPG20N04S4L11ATMA1 vs IPG20N10S4L35ATMA1 比較
詳細並排比較 IPG20N04S4L11ATMA1 由 Infineon 與 IPG20N10S4L35ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPG20N04S4L11ATMA1 | IPG20N10S4L35ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | 2 N-Channel (Dual) | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate | Logic Level Gate |
| Drain-to-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) @ 25C | 20 A per channel | — |
| R<sub>DS(on)</sub> Max @ VGS=10V, ID=17A | 11.6 mOhm | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Maximum Power Dissipation (PD) | 41 W | — |
| 工作溫度範圍 | -55C to +175C | — |
| 封裝 | PG-TDSON-8-4 (Super S08 / 8-TDSON EP) | — |
| 安裝類型 | Surface Mount | Surface Mount |
| MSL 等級 | 1 (260C peak reflow) | MSL1 (up to 260°C peak reflow) |
| Avalanche Rating | 100% Avalanche Tested | — |
| Automotive Qualification | AEC-Q101 Qualified | AEC-Q101 |
| RoHS 狀態 | Compliant (Green Product) | Compliant (Green Product) |
| Technology | OptiMOS-T2 trench | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IPG20N10S4L35ATMA1 |
| Drain-to-Source Voltage (V<sub>DSS</sub>) | — | 100 V |
| Continuous Drain Current (I<sub>D</sub>) at 25°C | — | 20 A |
| R<sub>DS(on)</sub> Max | — | 35 mΩ @ V<sub>GS</sub>=10 V, I<sub>D</sub>=17 A |
| Gate Threshold (V<sub>GS(th)</sub>) | — | [DATA_NEEDED: typical Vgs(th) value] |
| Power Dissipation (P<sub>D</sub>) | — | 43 W |
| 工作溫度 | — | 175°C max junction |
| 封裝 / 外殼 | — | PG-TDSON-8-4 (8-Pin TDSON EP) |
| Series | — | OptiMOS™, Automotive |
| Avalanche Rated | — | 100% Avalanche Tested |