IPG20N04S4L11ATMA1 vs IPG20N10S4L35ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPG20N04S4L11ATMA1 disebabkan oleh Infineon dan IPG20N10S4L35ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IPG20N10S4L35ATMA1 IPG20N10S4L35ATMA1 - 100V Dual N-Ch MOSFET, 35mΩ | Infineon

IPG20N10S4L35ATMA1 - 100V Dual N-Ch MOSFET, 35mΩ | Infineon

IPG20N10S4L35ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IPG20N04S4L11ATMA1 IPG20N10S4L35ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Logic Level Gate Logic Level Gate
Drain-to-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) @ 25C 20 A per channel —
R<sub>DS(on)</sub> Max @ VGS=10V, ID=17A 11.6 mOhm —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] —
Maximum Power Dissipation (PD) 41 W —
Gambaran Suhu Operasi -55C to +175C —
Kemasan PG-TDSON-8-4 (Super S08 / 8-TDSON EP) —
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL 1 (260C peak reflow) MSL1 (up to 260°C peak reflow)
Avalanche Rating 100% Avalanche Tested —
Automotive Qualification AEC-Q101 Qualified AEC-Q101
Status RoHS Compliant (Green Product) Compliant (Green Product)
Technology OptiMOS-T2 trench —
Manufacturer — Infineon Technologies
Part Number — IPG20N10S4L35ATMA1
Drain-to-Source Voltage (V<sub>DSS</sub>) — 100 V
Continuous Drain Current (I<sub>D</sub>) at 25°C — 20 A
R<sub>DS(on)</sub> Max — 35 mΩ @ V<sub>GS</sub>=10 V, I<sub>D</sub>=17 A
Gate Threshold (V<sub>GS(th)</sub>) — [DATA_NEEDED: typical Vgs(th) value]
Power Dissipation (P<sub>D</sub>) — 43 W
Suhu Operasi — 175°C max junction
Kemasan / Case — PG-TDSON-8-4 (8-Pin TDSON EP)
Series — OptiMOS™, Automotive
Avalanche Rated — 100% Avalanche Tested

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