IPG20N10S4L22AATMA1 vs IAUCN08S7L033ATMA1 Perbandingan

Perbandingan bersamaan detil IPG20N10S4L22AATMA1 dari Infineon dan IAUCN08S7L033ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IPG20N10S4L22AATMA1 IPG20N10S4L22AATMA1 - 100V Dual N-ch 22mΩ MOSFET | Infineon

IPG20N10S4L22AATMA1 - 100V Dual N-ch 22mΩ MOSFET | Infineon

IPG20N10S4L22AATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IPG20N10S4L22AATMA1 IAUCN08S7L033ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type Dual N-Channel —
Drain-Source Voltage (V<sub>DS</sub>) 100 V —
Continuous Drain Current (I<sub>D</sub>) 20 A —
On-State Resistance (R<sub>DS(on)</sub>) 22 mΩ (typical) —
Power Dissipation (P<sub>D</sub>) 60 W —
Gate-Source Voltage (V<sub>GS</sub>) ±20 V —
Gate Threshold (V<sub>GS(th)</sub>) [DATA_NEEDED: Vgs(th)] —
Tipe Mounting Surface Mount Surface Mount
Paket PG-TDSON-8-10 (Wettable Flank) PG-TDSON-8-34 (SSO8, 5x6 mm²)
Lead Configuration Wettable Flank —
Automotive Qualification AEC-Q101 —
Technology OptiMOS T2 OptiMOS 7 trench MOSFET
Suhu Kerja -55°C to +175°C —
Status RoHS Compliant Compliant
Channel Count 2 (dual independent) —
Manufacturer — Infineon Technologies
Series — Automotive OptiMOS 7
Tipe Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 80 V
Maximum On-Resistance (RDS(on)) at VGS=10V — 3.3 mΩ
Continuous Drain Current (ID) at Tj — 130 A
Continuous Drain Current (ID) at Tc=25°C — [DATA_NEEDED: ID at Tc=25C]
Power Dissipation (PD) at Tc=25°C — 118 W
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
Gate-Source Voltage (VGS) max — ±20 V (typical Infineon OptiMOS 7 limit)
Rentang Suhu Kerja — -55°C to +175°C (TJ)
Qualification — Automotive Grade (per Infineon datasheet header)
Level MSL — 1 (per JEDEC J-STD-020, typical for this package)

Spek dan Sumber

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