IPG20N10S4L22AATMA1 vs IAUCN08S7L033ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPG20N10S4L22AATMA1 disebabkan oleh Infineon dan IAUCN08S7L033ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IPG20N10S4L22AATMA1 IPG20N10S4L22AATMA1 - 100V Dual N-ch 22mΩ MOSFET | Infineon

IPG20N10S4L22AATMA1 - 100V Dual N-ch 22mΩ MOSFET | Infineon

IPG20N10S4L22AATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IPG20N10S4L22AATMA1 IAUCN08S7L033ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type Dual N-Channel —
Drain-Source Voltage (V<sub>DS</sub>) 100 V —
Continuous Drain Current (I<sub>D</sub>) 20 A —
On-State Resistance (R<sub>DS(on)</sub>) 22 mΩ (typical) —
Power Dissipation (P<sub>D</sub>) 60 W —
Gate-Source Voltage (V<sub>GS</sub>) ±20 V —
Gate Threshold (V<sub>GS(th)</sub>) [DATA_NEEDED: Vgs(th)] —
Jenis Pemasangan Surface Mount Surface Mount
Kemasan PG-TDSON-8-10 (Wettable Flank) PG-TDSON-8-34 (SSO8, 5x6 mm²)
Lead Configuration Wettable Flank —
Automotive Qualification AEC-Q101 —
Technology OptiMOS T2 OptiMOS 7 trench MOSFET
Suhu Operasi -55°C to +175°C —
Status RoHS Compliant Compliant
Channel Count 2 (dual independent) —
Manufacturer — Infineon Technologies
Series — Automotive OptiMOS 7
Jenis Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 80 V
Maximum On-Resistance (RDS(on)) at VGS=10V — 3.3 mΩ
Continuous Drain Current (ID) at Tj — 130 A
Continuous Drain Current (ID) at Tc=25°C — [DATA_NEEDED: ID at Tc=25C]
Power Dissipation (PD) at Tc=25°C — 118 W
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
Gate-Source Voltage (VGS) max — ±20 V (typical Infineon OptiMOS 7 limit)
Gambaran Suhu Operasi — -55°C to +175°C (TJ)
Qualification — Automotive Grade (per Infineon datasheet header)
Aras MSL — 1 (per JEDEC J-STD-020, typical for this package)

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