IPG20N10S4L22AATMA1 vs IAUCN08S7L033ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPG20N10S4L22AATMA1 sa pamamagitan ng Infineon at IAUCN08S7L033ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPG20N10S4L22AATMA1 - 100V Dual N-ch 22mΩ MOSFET | Infineon
IPG20N10S4L22AATMA1 ✓ NakahandaInfineon
IAUCN08S7L033ATMA1 - 80V 3.3mΩ OptiMOS 7 N-MOSFET | Infineon
IAUCN08S7L033ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPG20N10S4L22AATMA1 | IAUCN08S7L033ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | Dual N-Channel | — |
| Drain-Source Voltage (V<sub>DS</sub>) | 100 V | — |
| Continuous Drain Current (I<sub>D</sub>) | 20 A | — |
| On-State Resistance (R<sub>DS(on)</sub>) | 22 mΩ (typical) | — |
| Power Dissipation (P<sub>D</sub>) | 60 W | — |
| Gate-Source Voltage (V<sub>GS</sub>) | ±20 V | — |
| Gate Threshold (V<sub>GS(th)</sub>) | [DATA_NEEDED: Vgs(th)] | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Packhaging | PG-TDSON-8-10 (Wettable Flank) | PG-TDSON-8-34 (SSO8, 5x6 mm²) |
| Lead Configuration | Wettable Flank | — |
| Automotive Qualification | AEC-Q101 | — |
| Technology | OptiMOS T2 | OptiMOS 7 trench MOSFET |
| Temperature na Operasyon | -55°C to +175°C | — |
| Tindminan RoHS | Compliant | Compliant |
| Channel Count | 2 (dual independent) | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | Automotive OptiMOS 7 |
| Uri ng Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 80 V |
| Maximum On-Resistance (RDS(on)) at VGS=10V | — | 3.3 mΩ |
| Continuous Drain Current (ID) at Tj | — | 130 A |
| Continuous Drain Current (ID) at Tc=25°C | — | [DATA_NEEDED: ID at Tc=25C] |
| Power Dissipation (PD) at Tc=25°C | — | 118 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Gate-Source Voltage (VGS) max | — | ±20 V (typical Infineon OptiMOS 7 limit) |
| Hanay ng Temperature na Operasyon | — | -55°C to +175°C (TJ) |
| Qualification | — | Automotive Grade (per Infineon datasheet header) |
| Level ng MSL | — | 1 (per JEDEC J-STD-020, typical for this package) |