IPL60R105P7AUMA1 vs IPA60R180P7SXKSA1 Perbandingan
Perbandingan bersamaan detil IPL60R105P7AUMA1 dari Infineon dan IPA60R180P7SXKSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IPL60R105P7AUMA1 - 600V CoolMOS P7 105mΩ N-Channel MOSFET | Infineon
IPL60R105P7AUMA1 ✓ Aktif
Perbandingan Spesifikasi
| Parameter Umum | IPL60R105P7AUMA1 | IPA60R180P7SXKSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS P7 | CoolMOS P7 |
| Technology | Superjunction (SJ) N-Channel Power MOSFET | Superjunction (SJ) N-channel MOSFET |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| On-Resistance (RDS(on)) max | 105 mΩ | — |
| Continuous Drain Current (ID) at Tc | 33 A | 18 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (Ptot) at Tc | 137 W | — |
| Gate Threshold Voltage (VGS(th)) typ | 3.5 V | — |
| Gate Charge (Qg) typ | 45 nC | — |
| Rentang Suhu Kerja | -55C to +150C | -55C to +150C (junction) |
| Paket | PG-VSON-4 (4-pin SMD with exposed pad) | PG-TO220-3-312 (Through-Hole, 3 leads) |
| Tipe Mounting | Surface Mount | Through Hole |
| Channel Type | N-Channel | N-Channel |
| Level MSL | [DATA_NEEDED: MSL rating] | — |
| Status RoHS | Compliant | Compliant |
| Bebas Halogen | Yes | — |
| Lead-Free | Yes | Yes |
| Static Drain-Source On-Resistance (RDS(on)) | — | 180 mOhm (max at 25C) |
| Power Dissipation (PD) at Tc | — | 26 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: typical VGS(th)] |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Configuration | — | Single |