IPL60R105P7AUMA1 vs IPA60R180P7SXKSA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPL60R105P7AUMA1 sa pamamagitan ng Infineon at IPA60R180P7SXKSA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPA60R180P7SXKSA1 IPA60R180P7SXKSA1 - 600V CoolMOS P7 180mOhm MOSFET | Infineon

IPA60R180P7SXKSA1 - 600V CoolMOS P7 180mOhm MOSFET | Infineon

IPA60R180P7SXKSA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPL60R105P7AUMA1 IPA60R180P7SXKSA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS P7 CoolMOS P7
Technology Superjunction (SJ) N-Channel Power MOSFET Superjunction (SJ) N-channel MOSFET
Drain-Source Voltage (VDS) 600 V 600 V
On-Resistance (RDS(on)) max 105 mΩ —
Continuous Drain Current (ID) at Tc 33 A 18 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Power Dissipation (Ptot) at Tc 137 W —
Gate Threshold Voltage (VGS(th)) typ 3.5 V —
Gate Charge (Qg) typ 45 nC —
Hanay ng Temperature na Operasyon -55C to +150C -55C to +150C (junction)
Packhaging PG-VSON-4 (4-pin SMD with exposed pad) PG-TO220-3-312 (Through-Hole, 3 leads)
Uri ng Pagpapasok Surface Mount Through Hole
Channel Type N-Channel N-Channel
Level ng MSL [DATA_NEEDED: MSL rating] —
Tindminan RoHS Compliant Compliant
Wala sa Halogen Yes —
Lead-Free Yes Yes
Static Drain-Source On-Resistance (RDS(on)) — 180 mOhm (max at 25C)
Power Dissipation (PD) at Tc — 26 W
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: typical VGS(th)]
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Configuration — Single

Mga Datasheets at Resources

Tingnan ang Lahat ng mga Produkto Lumikha ng BOM Hilingin ang Kita