IPL60R105P7AUMA1 vs IPA60R180P7SXKSA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPL60R105P7AUMA1 disebabkan oleh Infineon dan IPA60R180P7SXKSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IPL60R105P7AUMA1 - 600V CoolMOS P7 105mΩ N-Channel MOSFET | Infineon
IPL60R105P7AUMA1 ✓ Aktif
Pengandingan Spesifikasi
| Parametr | IPL60R105P7AUMA1 | IPA60R180P7SXKSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS P7 | CoolMOS P7 |
| Technology | Superjunction (SJ) N-Channel Power MOSFET | Superjunction (SJ) N-channel MOSFET |
| Drain-Source Voltage (VDS) | 600 V | 600 V |
| On-Resistance (RDS(on)) max | 105 mΩ | — |
| Continuous Drain Current (ID) at Tc | 33 A | 18 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Power Dissipation (Ptot) at Tc | 137 W | — |
| Gate Threshold Voltage (VGS(th)) typ | 3.5 V | — |
| Gate Charge (Qg) typ | 45 nC | — |
| Gambaran Suhu Operasi | -55C to +150C | -55C to +150C (junction) |
| Kemasan | PG-VSON-4 (4-pin SMD with exposed pad) | PG-TO220-3-312 (Through-Hole, 3 leads) |
| Jenis Pemasangan | Surface Mount | Through Hole |
| Channel Type | N-Channel | N-Channel |
| Aras MSL | [DATA_NEEDED: MSL rating] | — |
| Status RoHS | Compliant | Compliant |
| Boson Bebas | Yes | — |
| Lead-Free | Yes | Yes |
| Static Drain-Source On-Resistance (RDS(on)) | — | 180 mOhm (max at 25C) |
| Power Dissipation (PD) at Tc | — | 26 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: typical VGS(th)] |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Configuration | — | Single |