IPL60R125C7AUMA1 vs IPL65R070C7AUMA1 Perbandingan

Perbandingan bersamaan detil IPL60R125C7AUMA1 dari Infineon dan IPL65R070C7AUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IPL60R125C7AUMA1 IPL60R125C7AUMA1 - 600V 17A 125mOhm CoolMOS C7 | Infineon

IPL60R125C7AUMA1 - 600V 17A 125mOhm CoolMOS C7 | Infineon

IPL60R125C7AUMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IPL60R125C7AUMA1 IPL65R070C7AUMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS C7 CoolMOS C7
FET Type N-Channel —
Technology CoolMOS (superjunction) Superjunction N-Channel MOSFET
Drain-Source Voltage (VDS) 600 V 650 V
Continuous Drain Current (ID, Tc) 17 A —
On-State Resistance (RDS(on), max) 125 mOhm —
Power Dissipation (PD, Tc) 103 W —
Gate Threshold Voltage (VGS(th), typ) 3.5 V —
Gate Charge (Qg, typ) [DATA_NEEDED: Qg value] —
Paket PG-VSON-4 (surface mount) PG-VSON-4 (surface mount)
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 4 (Gate / Drain / Drain / Source) —
Rentang Suhu Kerja -55 C to +150 C (junction) —
Status RoHS Compliant Compliant
Level MSL 1 (unlimited) [DATA_NEEDED: MSL rating]
Channel Mode Enhancement —
Drive Voltage (recommended) 10 V VGS —
Continuous Drain Current (ID) at TC=25°C — 28 A
Continuous Drain Current (ID) at TC=100°C — [DATA_NEEDED: ID at TC=100°C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max at VGS=10V — 70 mΩ (typical)
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/range]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typical]
Power Dissipation (PD) at TC=25°C — 169 W
Avalanche Energy (EAS) — 171 mJ
Suhu Hubung Kerja — -55°C to +150°C
Configuration — Single with built-in diode
Channel Type — N-Channel
Lead-Free — Yes

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