IPL60R125C7AUMA1 vs IPL65R070C7AUMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPL60R125C7AUMA1 sa pamamagitan ng Infineon at IPL65R070C7AUMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPL60R125C7AUMA1 IPL60R125C7AUMA1 - 600V 17A 125mOhm CoolMOS C7 | Infineon

IPL60R125C7AUMA1 - 600V 17A 125mOhm CoolMOS C7 | Infineon

IPL60R125C7AUMA1 ✓ Nakahanda
Infineon
IPL65R070C7AUMA1 IPL65R070C7AUMA1 - 650V 70mΩ CoolMOS C7 MOSFET | Infineon

IPL65R070C7AUMA1 - 650V 70mΩ CoolMOS C7 MOSFET | Infineon

IPL65R070C7AUMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPL60R125C7AUMA1 IPL65R070C7AUMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS C7 CoolMOS C7
FET Type N-Channel —
Technology CoolMOS (superjunction) Superjunction N-Channel MOSFET
Drain-Source Voltage (VDS) 600 V 650 V
Continuous Drain Current (ID, Tc) 17 A —
On-State Resistance (RDS(on), max) 125 mOhm —
Power Dissipation (PD, Tc) 103 W —
Gate Threshold Voltage (VGS(th), typ) 3.5 V —
Gate Charge (Qg, typ) [DATA_NEEDED: Qg value] —
Packhaging PG-VSON-4 (surface mount) PG-VSON-4 (surface mount)
Uri ng Pagpapasok Surface Mount Surface Mount
Bilang ng Pin 4 (Gate / Drain / Drain / Source) —
Hanay ng Temperature na Operasyon -55 C to +150 C (junction) —
Tindminan RoHS Compliant Compliant
Level ng MSL 1 (unlimited) [DATA_NEEDED: MSL rating]
Channel Mode Enhancement —
Drive Voltage (recommended) 10 V VGS —
Continuous Drain Current (ID) at TC=25°C — 28 A
Continuous Drain Current (ID) at TC=100°C — [DATA_NEEDED: ID at TC=100°C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max at VGS=10V — 70 mΩ (typical)
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/range]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typical]
Power Dissipation (PD) at TC=25°C — 169 W
Avalanche Energy (EAS) — 171 mJ
Temperature ng Junction na Operasyon — -55°C to +150°C
Configuration — Single with built-in diode
Channel Type — N-Channel
Lead-Free — Yes

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