IPL65R070C7AUMA1 vs IPL60R125C7AUMA1 Perbandingan

Perbandingan bersamaan detil IPL65R070C7AUMA1 dari Infineon dan IPL60R125C7AUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IPL60R125C7AUMA1 IPL60R125C7AUMA1 - 600V 17A 125mOhm CoolMOS C7 | Infineon

IPL60R125C7AUMA1 - 600V 17A 125mOhm CoolMOS C7 | Infineon

IPL60R125C7AUMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IPL65R070C7AUMA1 IPL60R125C7AUMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS C7 CoolMOS C7
Technology Superjunction N-Channel MOSFET CoolMOS (superjunction)
Drain-Source Voltage (VDS) 650 V 600 V
Continuous Drain Current (ID) at TC=25°C 28 A —
Continuous Drain Current (ID) at TC=100°C [DATA_NEEDED: ID at TC=100°C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance RDS(on) max at VGS=10V 70 mΩ (typical) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/range] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] —
Power Dissipation (PD) at TC=25°C 169 W —
Avalanche Energy (EAS) 171 mJ —
Suhu Hubung Kerja -55°C to +150°C —
Paket PG-VSON-4 (surface mount) PG-VSON-4 (surface mount)
Tipe Mounting Surface Mount Surface Mount
Configuration Single with built-in diode —
Channel Type N-Channel —
Status RoHS Compliant Compliant
Lead-Free Yes —
Level MSL [DATA_NEEDED: MSL rating] 1 (unlimited)
FET Type — N-Channel
Continuous Drain Current (ID, Tc) — 17 A
On-State Resistance (RDS(on), max) — 125 mOhm
Power Dissipation (PD, Tc) — 103 W
Gate Threshold Voltage (VGS(th), typ) — 3.5 V
Gate Charge (Qg, typ) — [DATA_NEEDED: Qg value]
Jumlah Pin — 4 (Gate / Drain / Drain / Source)
Rentang Suhu Kerja — -55 C to +150 C (junction)
Channel Mode — Enhancement
Drive Voltage (recommended) — 10 V VGS

Spek dan Sumber

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