IPN60R2K0PFD7SATMA1 vs IPN70R1K4P7SATMA1 Perbandingan
Perbandingan bersamaan detil IPN60R2K0PFD7SATMA1 dari Infineon dan IPN70R1K4P7SATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPN60R2K0PFD7SATMA1 | IPN70R1K4P7SATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Series | CoolMOS PFD7 | CoolMOS P7 |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (V(BR)DSS) | 600 V | 700 V |
| Continuous Drain Current (Tc) | 3 A | — |
| Power Dissipation (Tc) | 6 W | — |
| RDS(on) typical @ VGS=10V | 2.0 Ohm | — |
| RDS(on) max @ VGS=10V | 1.626 Ohm (per Infineon product page) | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | 3.8 nC @ 10 V (per UTMel listing) | [DATA_NEEDED: VGS(th) typical/min/max] |
| Input Capacitance (Ciss) | 134 pF @ 400 V (per UTMel listing) | — |
| Technology | CoolMOS superjunction | Superjunction (CoolMOS P7) |
| Paket | PG-SOT223-3-1 (SOT-223) | PG-SOT223 (3-pin + tab, surface mount) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | [DATA_NEEDED: operating temperature range] | -55C to +150C (TJ) |
| Level MSL | [DATA_NEEDED: MSL level] | 1 (per JEDEC J-STD-020) |
| Status RoHS | Compliant (per Newark listing) | Compliant |
| Tipe Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at TC | — | 4 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Static Drain-Source On-Resistance (RDS(on)) | — | 1.4 ohm class (per '1K4' suffix) |
| Total Power Dissipation (PD) at TC | — | 6.2 W |
| Configuration | — | Single with built-in diode |
| Jumlah Pin | — | 3 (Gate, Drain, Source) |
| DPAK Footprint Compatible | — | Yes (drop-in alternative to DPAK per datasheet) |