IPN60R2K0PFD7SATMA1 vs IPN70R1K4P7SATMA1 比較
詳細並排比較 IPN60R2K0PFD7SATMA1 由 Infineon 與 IPN70R1K4P7SATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPN60R2K0PFD7SATMA1 | IPN70R1K4P7SATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Series | CoolMOS PFD7 | CoolMOS P7 |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (V(BR)DSS) | 600 V | 700 V |
| Continuous Drain Current (Tc) | 3 A | — |
| Power Dissipation (Tc) | 6 W | — |
| RDS(on) typical @ VGS=10V | 2.0 Ohm | — |
| RDS(on) max @ VGS=10V | 1.626 Ohm (per Infineon product page) | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | 3.8 nC @ 10 V (per UTMel listing) | [DATA_NEEDED: VGS(th) typical/min/max] |
| Input Capacitance (Ciss) | 134 pF @ 400 V (per UTMel listing) | — |
| Technology | CoolMOS superjunction | Superjunction (CoolMOS P7) |
| 封裝 | PG-SOT223-3-1 (SOT-223) | PG-SOT223 (3-pin + tab, surface mount) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度範圍 | [DATA_NEEDED: operating temperature range] | -55C to +150C (TJ) |
| MSL 等級 | [DATA_NEEDED: MSL level] | 1 (per JEDEC J-STD-020) |
| RoHS 狀態 | Compliant (per Newark listing) | Compliant |
| 電晶體類型 | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at TC | — | 4 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Static Drain-Source On-Resistance (RDS(on)) | — | 1.4 ohm class (per '1K4' suffix) |
| Total Power Dissipation (PD) at TC | — | 6.2 W |
| Configuration | — | Single with built-in diode |
| 腳位數 | — | 3 (Gate, Drain, Source) |
| DPAK Footprint Compatible | — | Yes (drop-in alternative to DPAK per datasheet) |