IPN70R1K4P7SATMA1 vs IPD70R1K4P7SAUMA1 Perbandingan

Perbandingan bersamaan detil IPN70R1K4P7SATMA1 dari Infineon dan IPD70R1K4P7SAUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IPN70R1K4P7SATMA1 IPN70R1K4P7SATMA1 - 700V 4A CoolMOS P7 MOSFET | Infineon

IPN70R1K4P7SATMA1 - 700V 4A CoolMOS P7 MOSFET | Infineon

IPN70R1K4P7SATMA1 ✓ Aktif
Infineon
IPD70R1K4P7SAUMA1 IPD70R1K4P7SAUMA1 - 700V 4A CoolMOS P7 MOSFET | Infineon

IPD70R1K4P7SAUMA1 - 700V 4A CoolMOS P7 MOSFET | Infineon

IPD70R1K4P7SAUMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IPN70R1K4P7SATMA1 IPD70R1K4P7SAUMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Series CoolMOS P7 —
Tipe Transistor N-Channel MOSFET —
Drain-Source Voltage (V(BR)DSS) 700 V —
Continuous Drain Current (ID) at TC 4 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: IDM]
Static Drain-Source On-Resistance (RDS(on)) 1.4 ohm class (per '1K4' suffix) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] [DATA_NEEDED: VGS(th) typical]
Total Power Dissipation (PD) at TC 6.2 W —
Technology Superjunction (CoolMOS P7) Superjunction (CoolMOS P7)
Paket PG-SOT223 (3-pin + tab, surface mount) PG-TO252-3 (DPAK)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55C to +150C (TJ) —
Configuration Single with built-in diode —
Jumlah Pin 3 (Gate, Drain, Source) 3 (Gate, Drain, Source)
DPAK Footprint Compatible Yes (drop-in alternative to DPAK per datasheet) —
Status RoHS Compliant Compliant
Level MSL 1 (per JEDEC J-STD-020) —
Part Family — CoolMOS P7 (700V Superjunction)
Polarity / Channel Type — N-Channel
Drain-Source Voltage (VDS) — 700 V
Continuous Drain Current (ID) at Tc=25C — 4 A
Continuous Drain Current (ID) at Tc=100C — [DATA_NEEDED: ID at Tc=100C]
On-Resistance RDS(on) max at VGS=10V, ID — 1.4 ohm
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Total Power Dissipation (Ptot) at Tc=25C — 23 W
Suhu Hubung Kerja — -55C to +150C
Avalanche Energy Rated — Yes (100% avalanche tested)
ESD Protection — Integrated (per datasheet)

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