IPN70R360P7SATMA1 vs IPL60R105P7AUMA1 Perbandingan
Perbandingan bersamaan detil IPN70R360P7SATMA1 dari Infineon dan IPL60R105P7AUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IPL60R105P7AUMA1 - 600V CoolMOS P7 105mΩ N-Channel MOSFET | Infineon
IPL60R105P7AUMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IPN70R360P7SATMA1 | IPL60R105P7AUMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Drain-Source Voltage (Vdss) | 700 V | — |
| Drain Current Continuous (Id, Tc=25°C) | 12.5 A | — |
| On-State Resistance Rds(on) max (Vgs=10V) | 360 mΩ | — |
| Power Dissipation (Pd, Tc=25°C) | 7.2 W | — |
| Gate-Source Voltage (Vgs) max | [DATA_NEEDED: Vgs max rating] | — |
| Gate Threshold Voltage (Vth) typ | 3.0 V | — |
| Technology | CoolMOS P7 Superjunction (SJ) | Superjunction (SJ) N-Channel Power MOSFET |
| Channel Type | N-Channel | N-Channel |
| Paket | PG-SOT223 (3-pin, 2+Tab) | PG-VSON-4 (4-pin SMD with exposed pad) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | -55°C to +150°C (junction) | -55C to +150C |
| Storage Temperature Range | -55°C to +150°C | — |
| ESD Protection (HBM) | Class 1C | — |
| Drain Tab Connection | Pin 3 (Tab) | — |
| RoHS / REACH | Compliant (per Infineon product page) | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | CoolMOS P7 |
| Drain-Source Voltage (VDS) | — | 600 V |
| On-Resistance (RDS(on)) max | — | 105 mΩ |
| Continuous Drain Current (ID) at Tc | — | 33 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (Ptot) at Tc | — | 137 W |
| Gate Threshold Voltage (VGS(th)) typ | — | 3.5 V |
| Gate Charge (Qg) typ | — | 45 nC |
| Level MSL | — | [DATA_NEEDED: MSL rating] |
| Status RoHS | — | Compliant |
| Bebas Halogen | — | Yes |
| Lead-Free | — | Yes |