IPN80R1K4P7ATMA1 vs IPN80R1K2P7ATMA1 Perbandingan
Perbandingan bersamaan detil IPN80R1K4P7ATMA1 dari Infineon dan IPN80R1K2P7ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPN80R1K4P7ATMA1 | IPN80R1K2P7ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolMOS P7 (500V-950V) | — |
| Tipe Transistor | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 800 V | — |
| Continuous Drain Current (ID, Tc) | 4 A | — |
| Static Drain-Source On-Resistance (RDS(on) max) | 1200 mOhm | — |
| Power Dissipation (Tc) | 7 W | — |
| Gate-Source Voltage (VGS) | ±20 V (max) | — |
| Technology | Superjunction (CoolMOS P7) | Superjunction (CoolMOS) |
| Paket | PG-SOT223 (surface mount) | SOT-223 (3-pin, 2 + tab) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | -55C to +150C | -55°C to +150°C (TJ) |
| Status RoHS | Compliant | — |
| Grade | Industrial | — |
| Level MSL | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL rating] |
| Family / Series | — | CoolMOS P7 |
| Drain-Source Voltage VDSS | — | 800 V |
| Continuous Drain Current ID (Tc) | — | 4.5 A |
| Maximum RDS(on) | — | 1200 mΩ at VGS = 10 V |
| Power Dissipation PD (Tc) | — | 6.8 W |
| Gate-Source Voltage VGSS | — | [DATA_NEEDED: VGSS absolute maximum] |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| ESD Protection | — | ESD-protected gate (per CoolMOS P7 family) |
| RoHS Compliance | — | Compliant |