IPP037N08N3GXKSA1 vs IPW60R037P7XKSA1 Perbandingan
Perbandingan bersamaan detil IPP037N08N3GXKSA1 dari Infineon dan IPW60R037P7XKSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPP037N08N3GXKSA1 | IPW60R037P7XKSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) - OptiMOS™ 3 | CoolMOS Superjunction (SJ) |
| Drain to Source Voltage (Vdss) | 80 V | — |
| Continuous Drain Current (Id) @ Tc=25°C | 100 A | — |
| RDS(on) Max @ VGS=10V | 3.75 mΩ | — |
| Drive Voltage (Max RDS(on), Min RDS(on)) | 6 V, 10 V | — |
| Power Dissipation (Pd) @ Tc=25°C | 214 W | — |
| Paket | PG-TO220-3 (Through Hole) | PG-TO247-3 (TO-247-3, through-hole) |
| Tipe Mounting | Through Hole | Through Hole |
| Jumlah Pin | 3 | — |
| Rentang Suhu Kerja | -55°C to +175°C (junction) | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) typ/min/max] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ @ VGS=10V] | — |
| Avalanche Energy Rating (EAS) | [DATA_NEEDED: EAS] | — |
| Status RoHS | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Series | — | CoolMOS™ P7 |
| Tipe Transistor | — | N-Channel MOSFET (Superjunction) |
| Drain-Source Voltage (V_DSS) | — | 600 V |
| Continuous Drain Current (I_D, Tc=25 °C) | — | 76 A |
| On-Resistance (R_DS(on), max, V_GS=10 V) | — | 37 mΩ |
| Power Dissipation (P_D, Tc=25 °C) | — | 255 W |
| Gate Threshold Voltage (V_GS(th), typ) | — | 3.5 V |
| Suhu Hubung Kerja | — | -55 °C to +150 °C |
| Orderable Part Number Suffix | — | XKSA1 (tube packaging, industrial) |
| Avalanche Rated | — | Yes |