IPP100N12S305AKSA2 vs IPP60R180P7XKSA1 Perbandingan

Perbandingan bersamaan detil IPP100N12S305AKSA2 dari Infineon dan IPP60R180P7XKSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPP100N12S305AKSA2 IPP60R180P7XKSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 —
FET Type N-Channel —
Drain-Source Voltage (VDS) 120 V 600 V
Continuous Drain Current (ID, TC=25C) 100 A —
Continuous Drain Current (ID, TC=100C) [DATA_NEEDED: ID at TC=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Maximum Power Dissipation (PD, TC=25C) 300 W —
On-State Resistance R_DS(on) max @ VGS=10V [DATA_NEEDED: R_DS(on) max] —
Gate Threshold Voltage VGS(th) typ [DATA_NEEDED: VGS(th)] 3.5 V
Gate Charge Qg typ @ VGS=10V [DATA_NEEDED: total gate charge] —
Total Gate Charge Qg [DATA_NEEDED: Qg value] —
Reverse Recovery Charge Qrr [DATA_NEEDED: Qrr value] —
Rentang Suhu Kerja -55C to +175C (TJ) -55 °C to +150 °C
Paket PG-TO220-3-1 (Through Hole) PG-TO220-3 (through-hole)
Tipe Mounting Through Hole Through Hole
Jumlah Pin 3 (Gate, Drain, Source) —
Status RoHS Compliant Compliant
Level MSL N/A (Through Hole) N/A (through-hole)
Avalanche Energy Rated Yes (single-pulse) Yes
Technology — CoolMOS P7 (Superjunction N-Channel)
Continuous Drain Current (ID) at TC=25°C — 18 A
Pulsed Drain Current (ID,pulse) — [DATA_NEEDED: pulsed drain current at TC=25°C]
On-Resistance RDS(on) max at VGS=10V — 180 mΩ
Gate Charge Qg typ — [DATA_NEEDED: total gate charge at VGS=10V]
Power Dissipation PD at TC=25°C — 72 W
Jumlah Pin — 3 (Gate, Drain, Source)
Lead-Free — Yes

Spek dan Sumber

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