IPP100N12S305AKSA2 vs IPP60R180P7XKSA1 比較
詳細並排比較 IPP100N12S305AKSA2 由 Infineon 與 IPP60R180P7XKSA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
IPP100N12S305AKSA2 - 120V 100A N-Ch OptiMOS Power MOSFET | Infineon
IPP100N12S305AKSA2 ✓ 啟用中
規格比較
| 參數 | IPP100N12S305AKSA2 | IPP60R180P7XKSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 120 V | 600 V |
| Continuous Drain Current (ID, TC=25C) | 100 A | — |
| Continuous Drain Current (ID, TC=100C) | [DATA_NEEDED: ID at TC=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Maximum Power Dissipation (PD, TC=25C) | 300 W | — |
| On-State Resistance R_DS(on) max @ VGS=10V | [DATA_NEEDED: R_DS(on) max] | — |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th)] | 3.5 V |
| Gate Charge Qg typ @ VGS=10V | [DATA_NEEDED: total gate charge] | — |
| Total Gate Charge Qg | [DATA_NEEDED: Qg value] | — |
| Reverse Recovery Charge Qrr | [DATA_NEEDED: Qrr value] | — |
| 工作溫度範圍 | -55C to +175C (TJ) | -55 °C to +150 °C |
| 封裝 | PG-TO220-3-1 (Through Hole) | PG-TO220-3 (through-hole) |
| 安裝類型 | Through Hole | Through Hole |
| 腳位數 | 3 (Gate, Drain, Source) | — |
| RoHS 狀態 | Compliant | Compliant |
| MSL 等級 | N/A (Through Hole) | N/A (through-hole) |
| Avalanche Energy Rated | Yes (single-pulse) | Yes |
| Technology | — | CoolMOS P7 (Superjunction N-Channel) |
| Continuous Drain Current (ID) at TC=25°C | — | 18 A |
| Pulsed Drain Current (ID,pulse) | — | [DATA_NEEDED: pulsed drain current at TC=25°C] |
| On-Resistance RDS(on) max at VGS=10V | — | 180 mΩ |
| Gate Charge Qg typ | — | [DATA_NEEDED: total gate charge at VGS=10V] |
| Power Dissipation PD at TC=25°C | — | 72 W |
| 腳位數 | — | 3 (Gate, Drain, Source) |
| Lead-Free | — | Yes |