IPP320N20N3GXKSA1 vs IPB35N10S3L26ATMA1 Perbandingan

Perbandingan bersamaan detil IPP320N20N3GXKSA1 dari Infineon dan IPB35N10S3L26ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPP320N20N3GXKSA1 IPB35N10S3L26ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 3 OptiMOS-T
Technology N-Channel Trench MOSFET —
Drain-Source Voltage (VDS) 200 V —
Continuous Drain Current (ID) at TC=25°C 34 A —
On-State Resistance RDS(on) max at VGS=10V 32 mΩ —
Gate Threshold Voltage VGS(th) typ 4 V —
Total Power Dissipation PD at TC=25°C 136 W —
Paket TO-220-3 (PG-TO220-3) through-hole —
Tipe Mounting Through Hole Surface Mount
Jumlah Pin 3 (3 + Tab) —
Rentang Suhu Kerja -55°C to +175°C —
Channel Type N-Channel N-Channel
Element Configuration Single —
Status RoHS Compliant [DATA_NEEDED: RoHS status]
Lead-Free Yes —
Level MSL Not applicable (through-hole) —
Maximum Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at TC — 35 A
Power Dissipation (PD) at TC — 71 W
Package Type — PG-TO263-3 (D2PAK-2)
Jumlah Pin — 3 (Gate, Drain, Source)
Channel Mode — Enhancement
RDS(on) (typical per Infineon product page) — 26.3 mΩ
Typical Gate Charge Qg @ Vgs — 80 nC
Maximum Drain-Source Resistance Rds — 1.7 mΩ (per RS Components listing)
Minimum Operating Temperature — -55 C
Maximum Power Dissipation Pd — 81 W (per RS Components listing)
AEC-Q101 Qualification — [DATA_NEEDED: AEC-Q101 qualification status]

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