IPP320N20N3GXKSA1 vs IPB35N10S3L26ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPP320N20N3GXKSA1 sa pamamagitan ng Infineon at IPB35N10S3L26ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPP320N20N3GXKSA1 - 200V 34A OptiMOS 3 N-Channel MOSFET | Infineon
IPP320N20N3GXKSA1 ✓ NakahandaInfineon
IPB35N10S3L26ATMA1 - 100V 35A N-Ch OptiMOS-T MOSFET | Infineon
IPB35N10S3L26ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPP320N20N3GXKSA1 | IPB35N10S3L26ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 3 | OptiMOS-T |
| Technology | N-Channel Trench MOSFET | — |
| Drain-Source Voltage (VDS) | 200 V | — |
| Continuous Drain Current (ID) at TC=25°C | 34 A | — |
| On-State Resistance RDS(on) max at VGS=10V | 32 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | 4 V | — |
| Total Power Dissipation PD at TC=25°C | 136 W | — |
| Packhaging | TO-220-3 (PG-TO220-3) through-hole | — |
| Uri ng Pagpapasok | Through Hole | Surface Mount |
| Bilang ng Pins | 3 (3 + Tab) | — |
| Hanay ng Temperature na Operasyon | -55°C to +175°C | — |
| Channel Type | N-Channel | N-Channel |
| Element Configuration | Single | — |
| Tindminan RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Lead-Free | Yes | — |
| Level ng MSL | Not applicable (through-hole) | — |
| Maximum Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at TC | — | 35 A |
| Power Dissipation (PD) at TC | — | 71 W |
| Package Type | — | PG-TO263-3 (D2PAK-2) |
| Bilang ng Pin | — | 3 (Gate, Drain, Source) |
| Channel Mode | — | Enhancement |
| RDS(on) (typical per Infineon product page) | — | 26.3 mΩ |
| Typical Gate Charge Qg @ Vgs | — | 80 nC |
| Maximum Drain-Source Resistance Rds | — | 1.7 mΩ (per RS Components listing) |
| Minimum Operating Temperature | — | -55 C |
| Maximum Power Dissipation Pd | — | 81 W (per RS Components listing) |
| AEC-Q101 Qualification | — | [DATA_NEEDED: AEC-Q101 qualification status] |