IPT012N08N5ATMA1 vs IAUT300N08S5N011ATMA1 Perbandingan
Perbandingan bersamaan detil IPT012N08N5ATMA1 dari Infineon dan IAUT300N08S5N011ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPT012N08N5ATMA1 | IAUT300N08S5N011ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Part Number | IPT012N08N5ATMA1 | — |
| Technology | OptiMOS 5 | OptiMOS 5 (trench MOSFET) |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) Max | 80 V | — |
| Continuous Drain Current (ID, TC) | 300 A | — |
| Pulsed Drain Current (IDM) | 400 A | — |
| On-Resistance RDS(on) Max | 1.2 mOhm | — |
| Total Gate Charge QG | 208 nC | — |
| Gate-to-Drain Charge QGD | 178 nC | — |
| Power Dissipation (PD, TC) | 375 W | — |
| Paket | PG-HSOF-8 (TOLL) | PG-HSOF-8-1 (TOLL 10x12 mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | -55C to +175C (TJ max) | -55C to +175C |
| Status RoHS | Compliant | — |
| Qualification | JEDEC JESD47, JESD22, J-STD-020 (industrial) | Automotive (AEC-Q101) |
| FET Type | — | N-Channel |
| Drain-Source Voltage (V_DS) | — | 80 V |
| Continuous Drain Current (I_D, T_C=25C) | — | 300 A |
| Pulsed Drain Current (I_DM) | — | 410 A (Tj) |
| R_DS(on) max | — | 1.10 mOhm at V_GS=10 V |
| Gate Threshold Voltage (V_GS(th)) | — | 3.8 V |
| Total Gate Charge (Q_g) | — | 231 nC at V_GS=10 V |
| Input Capacitance (C_iss) | — | 16.25 nF |
| Output Capacitance (C_oss) | — | 2.6 nF |
| Reverse Transfer Capacitance (C_rss) | — | 130 pF |
| Power Dissipation (P_D) | — | 375 W at T_C=25C |
| Level MSL | — | 1 |