IPT012N08N5ATMA1 vs IAUT300N08S5N011ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPT012N08N5ATMA1 disebabkan oleh Infineon dan IAUT300N08S5N011ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPT012N08N5ATMA1 | IAUT300N08S5N011ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Part Number | IPT012N08N5ATMA1 | — |
| Technology | OptiMOS 5 | OptiMOS 5 (trench MOSFET) |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) Max | 80 V | — |
| Continuous Drain Current (ID, TC) | 300 A | — |
| Pulsed Drain Current (IDM) | 400 A | — |
| On-Resistance RDS(on) Max | 1.2 mOhm | — |
| Total Gate Charge QG | 208 nC | — |
| Gate-to-Drain Charge QGD | 178 nC | — |
| Power Dissipation (PD, TC) | 375 W | — |
| Kemasan | PG-HSOF-8 (TOLL) | PG-HSOF-8-1 (TOLL 10x12 mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Gambaran Suhu Operasi | -55C to +175C (TJ max) | -55C to +175C |
| Status RoHS | Compliant | — |
| Qualification | JEDEC JESD47, JESD22, J-STD-020 (industrial) | Automotive (AEC-Q101) |
| FET Type | — | N-Channel |
| Drain-Source Voltage (V_DS) | — | 80 V |
| Continuous Drain Current (I_D, T_C=25C) | — | 300 A |
| Pulsed Drain Current (I_DM) | — | 410 A (Tj) |
| R_DS(on) max | — | 1.10 mOhm at V_GS=10 V |
| Gate Threshold Voltage (V_GS(th)) | — | 3.8 V |
| Total Gate Charge (Q_g) | — | 231 nC at V_GS=10 V |
| Input Capacitance (C_iss) | — | 16.25 nF |
| Output Capacitance (C_oss) | — | 2.6 nF |
| Reverse Transfer Capacitance (C_rss) | — | 130 pF |
| Power Dissipation (P_D) | — | 375 W at T_C=25C |
| Aras MSL | — | 1 |