IPT012N08NF2SATMA1 vs IPB60R040CFD7ATMA1 Perbandingan

Perbandingan bersamaan detil IPT012N08NF2SATMA1 dari Infineon dan IPB60R040CFD7ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IPT012N08NF2SATMA1 IPT012N08NF2SATMA1 - 80V, 1.2mΩ N-Channel MOSFET | Infineon

IPT012N08NF2SATMA1 - 80V, 1.2mΩ N-Channel MOSFET | Infineon

IPT012N08NF2SATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IPT012N08NF2SATMA1 IPB60R040CFD7ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Status Stok — In Stock
Harga Unit (USD) — $5,19
Manufacturer Infineon Technologies Infineon Technologies
Part Number IPT012N08NF2SATMA1 —
Product Family StrongIRFET™ CoolMOS CFD7
Channel Type N-Channel —
Drain-Source Voltage (VDS) Max 80 V —
Continuous Drain Current (ID) at Ta 39 A —
Pulsed Drain Current (IDM) at Tc 351 A —
On-Resistance RDS(on) Typ @ VGS=10V 1.2 mΩ —
Gate Threshold Voltage (VGS(th)) Max 3.8 V —
Power Dissipation (PD) at Ta 3.8 W —
Power Dissipation (PD) at Tc 300 W —
Suhu Hubung Kerja -55 °C to +175 °C —
Paket PG-HSOF-8-10 (HSOF) PG-TO263-3-2 (D2PAK)
Tipe Mounting Surface Mount Surface Mount
Pin Count (incl. tab) 9 pins (8+tab) —
Technology Trench MOSFET (OptiMOS-derived) Superjunction (SJ) N-Channel MOSFET
Status RoHS Compliant Compliant
Packing Tape & Reel (T/R) —
Drain-Source Voltage (VDS) — 600 V
Continuous Drain Current (ID, Tc=25°C) — 50 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max @ VGS=10V — 40 mΩ
Gate Threshold Voltage VGS(th) typ — 4 V
Total Gate Charge Qg typ — [DATA_NEEDED: Qg]
Dissipasi Listrik (TC=25°C) — 227 W
Rentang Suhu Kerja — -55°C to +150°C
Integrated Body Diode — Yes - ultra-fast CoolMOS CFD7 diode
Level MSL — 1
Lead-Free — Yes
Target Applications — Soft-switching topologies (ZVS phase-shift full-bridge, LLC)

Spek dan Sumber

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