IPT012N08NF2SATMA1 vs IPB60R040CFD7ATMA1 比較
詳細並排比較 IPT012N08NF2SATMA1 由 Infineon 與 IPB60R040CFD7ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPT012N08NF2SATMA1 | IPB60R040CFD7ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 庫存狀態 | — | In Stock |
| 單價 (USD) | — | $5.19 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IPT012N08NF2SATMA1 | — |
| Product Family | StrongIRFET™ | CoolMOS CFD7 |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) Max | 80 V | — |
| Continuous Drain Current (ID) at Ta | 39 A | — |
| Pulsed Drain Current (IDM) at Tc | 351 A | — |
| On-Resistance RDS(on) Typ @ VGS=10V | 1.2 mΩ | — |
| Gate Threshold Voltage (VGS(th)) Max | 3.8 V | — |
| Power Dissipation (PD) at Ta | 3.8 W | — |
| Power Dissipation (PD) at Tc | 300 W | — |
| 工作接面溫度 | -55 °C to +175 °C | — |
| 封裝 | PG-HSOF-8-10 (HSOF) | PG-TO263-3-2 (D2PAK) |
| 安裝類型 | Surface Mount | Surface Mount |
| Pin Count (incl. tab) | 9 pins (8+tab) | — |
| Technology | Trench MOSFET (OptiMOS-derived) | Superjunction (SJ) N-Channel MOSFET |
| RoHS 狀態 | Compliant | Compliant |
| Packing | Tape & Reel (T/R) | — |
| Drain-Source Voltage (VDS) | — | 600 V |
| Continuous Drain Current (ID, Tc=25°C) | — | 50 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | — | 40 mΩ |
| Gate Threshold Voltage VGS(th) typ | — | 4 V |
| Total Gate Charge Qg typ | — | [DATA_NEEDED: Qg] |
| 功率耗散 (TC=25°C) | — | 227 W |
| 工作溫度範圍 | — | -55°C to +150°C |
| Integrated Body Diode | — | Yes - ultra-fast CoolMOS CFD7 diode |
| MSL 等級 | — | 1 |
| Lead-Free | — | Yes |
| Target Applications | — | Soft-switching topologies (ZVS phase-shift full-bridge, LLC) |