IPT022N10NF2SATMA1 vs IAUCN08S7L033ATMA1 Perbandingan

Perbandingan bersamaan detil IPT022N10NF2SATMA1 dari Infineon dan IAUCN08S7L033ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPT022N10NF2SATMA1 IAUCN08S7L033ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family StrongIRFET 2 —
FET Type N-Channel —
Drain-Source Voltage (V(BR)DSS) 100 V —
Continuous Drain Current (Id) at Ta 29 A —
Continuous Drain Current (Id) at Tc 236 A —
Typical RDS(on) at VGS=10V 2.2 mΩ —
Power Dissipation at Ta 3.8 W —
Power Dissipation at Tc 250 W —
Paket PG-HSOF-8-10 (8 leads + tab) PG-TDSON-8-34 (SSO8, 5x6 mm²)
Tipe Mounting Surface Mount Surface Mount
Technology Trench MOSFET OptiMOS 7 trench MOSFET
Rentang Suhu Kerja -55C to +175C -55°C to +175°C (TJ)
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] [DATA_NEEDED: VGS(th) typical]
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical value] —
Status RoHS Compliant Compliant
Series — Automotive OptiMOS 7
Tipe Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 80 V
Maximum On-Resistance (RDS(on)) at VGS=10V — 3.3 mΩ
Continuous Drain Current (ID) at Tj — 130 A
Continuous Drain Current (ID) at Tc=25°C — [DATA_NEEDED: ID at Tc=25C]
Power Dissipation (PD) at Tc=25°C — 118 W
Gate-Source Voltage (VGS) max — ±20 V (typical Infineon OptiMOS 7 limit)
Qualification — Automotive Grade (per Infineon datasheet header)
Level MSL — 1 (per JEDEC J-STD-020, typical for this package)

Spek dan Sumber

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