IPT022N10NF2SATMA1 vs IAUCN08S7L033ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPT022N10NF2SATMA1 disebabkan oleh Infineon dan IAUCN08S7L033ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPT022N10NF2SATMA1 IAUCN08S7L033ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family StrongIRFET 2 —
FET Type N-Channel —
Drain-Source Voltage (V(BR)DSS) 100 V —
Continuous Drain Current (Id) at Ta 29 A —
Continuous Drain Current (Id) at Tc 236 A —
Typical RDS(on) at VGS=10V 2.2 mΩ —
Power Dissipation at Ta 3.8 W —
Power Dissipation at Tc 250 W —
Kemasan PG-HSOF-8-10 (8 leads + tab) PG-TDSON-8-34 (SSO8, 5x6 mm²)
Jenis Pemasangan Surface Mount Surface Mount
Technology Trench MOSFET OptiMOS 7 trench MOSFET
Gambaran Suhu Operasi -55C to +175C -55°C to +175°C (TJ)
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] [DATA_NEEDED: VGS(th) typical]
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical value] —
Status RoHS Compliant Compliant
Series — Automotive OptiMOS 7
Jenis Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 80 V
Maximum On-Resistance (RDS(on)) at VGS=10V — 3.3 mΩ
Continuous Drain Current (ID) at Tj — 130 A
Continuous Drain Current (ID) at Tc=25°C — [DATA_NEEDED: ID at Tc=25C]
Power Dissipation (PD) at Tc=25°C — 118 W
Gate-Source Voltage (VGS) max — ±20 V (typical Infineon OptiMOS 7 limit)
Qualification — Automotive Grade (per Infineon datasheet header)
Aras MSL — 1 (per JEDEC J-STD-020, typical for this package)

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