IPT022N10NF2SATMA1 vs IAUCN08S7L033ATMA1 比較
詳細並排比較 IPT022N10NF2SATMA1 由 Infineon 與 IAUCN08S7L033ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPT022N10NF2SATMA1 | IAUCN08S7L033ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | StrongIRFET 2 | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (V(BR)DSS) | 100 V | — |
| Continuous Drain Current (Id) at Ta | 29 A | — |
| Continuous Drain Current (Id) at Tc | 236 A | — |
| Typical RDS(on) at VGS=10V | 2.2 mΩ | — |
| Power Dissipation at Ta | 3.8 W | — |
| Power Dissipation at Tc | 250 W | — |
| 封裝 | PG-HSOF-8-10 (8 leads + tab) | PG-TDSON-8-34 (SSO8, 5x6 mm²) |
| 安裝類型 | Surface Mount | Surface Mount |
| Technology | Trench MOSFET | OptiMOS 7 trench MOSFET |
| 工作溫度範圍 | -55C to +175C | -55°C to +175°C (TJ) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical value] | — |
| RoHS 狀態 | Compliant | Compliant |
| Series | — | Automotive OptiMOS 7 |
| 電晶體類型 | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 80 V |
| Maximum On-Resistance (RDS(on)) at VGS=10V | — | 3.3 mΩ |
| Continuous Drain Current (ID) at Tj | — | 130 A |
| Continuous Drain Current (ID) at Tc=25°C | — | [DATA_NEEDED: ID at Tc=25C] |
| Power Dissipation (PD) at Tc=25°C | — | 118 W |
| Gate-Source Voltage (VGS) max | — | ±20 V (typical Infineon OptiMOS 7 limit) |
| Qualification | — | Automotive Grade (per Infineon datasheet header) |
| MSL 等級 | — | 1 (per JEDEC J-STD-020, typical for this package) |