IPT067N20NM6ATMA1 vs IPT012N08N5ATMA1 Perbandingan

Perbandingan bersamaan detil IPT067N20NM6ATMA1 dari Infineon dan IPT012N08N5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPT067N20NM6ATMA1 IPT012N08N5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 6 —
Tipe Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 200 V —
Continuous Drain Current (ID) at TA=25C 15.3 A —
Continuous Drain Current (ID) at TC=25C 137 A —
Power Dissipation (PD) at TA=25C 3.8 W —
Power Dissipation (PD) at TC=25C 300 W —
Tipe Mounting Surface Mount Surface Mount
Paket PG-HSOF-8-1 (8-pin + exposed tab) PG-HSOF-8 (TOLL)
Rentang Suhu Kerja -55C to +150C (junction) -55C to +175C (TJ max)
Technology Trench-gate OptiMOS 6 silicon OptiMOS 5
Gate-Source Voltage (VGS) [DATA_NEEDED: max VGS rating] —
On-Resistance RDS(on) typ [DATA_NEEDED: RDS(on) at VGS=10V] —
Gate Charge (Qg) typ [DATA_NEEDED: total gate charge] —
Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) typical value] —
Status RoHS Compliant Compliant
Lead-Free Yes —
Level MSL [DATA_NEEDED: MSL moisture sensitivity level] —
Configuration Single N-channel —
Part Number — IPT012N08N5ATMA1
Channel Type — N-Channel
Drain-Source Voltage (VDS) Max — 80 V
Continuous Drain Current (ID, TC) — 300 A
Pulsed Drain Current (IDM) — 400 A
On-Resistance RDS(on) Max — 1.2 mOhm
Total Gate Charge QG — 208 nC
Gate-to-Drain Charge QGD — 178 nC
Power Dissipation (PD, TC) — 375 W
Qualification — JEDEC JESD47, JESD22, J-STD-020 (industrial)

Spek dan Sumber

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