IPT067N20NM6ATMA1 vs IPT012N08N5ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPT067N20NM6ATMA1 disebabkan oleh Infineon dan IPT012N08N5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPT067N20NM6ATMA1 IPT012N08N5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 6 —
Jenis Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 200 V —
Continuous Drain Current (ID) at TA=25C 15.3 A —
Continuous Drain Current (ID) at TC=25C 137 A —
Power Dissipation (PD) at TA=25C 3.8 W —
Power Dissipation (PD) at TC=25C 300 W —
Jenis Pemasangan Surface Mount Surface Mount
Kemasan PG-HSOF-8-1 (8-pin + exposed tab) PG-HSOF-8 (TOLL)
Gambaran Suhu Operasi -55C to +150C (junction) -55C to +175C (TJ max)
Technology Trench-gate OptiMOS 6 silicon OptiMOS 5
Gate-Source Voltage (VGS) [DATA_NEEDED: max VGS rating] —
On-Resistance RDS(on) typ [DATA_NEEDED: RDS(on) at VGS=10V] —
Gate Charge (Qg) typ [DATA_NEEDED: total gate charge] —
Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) typical value] —
Status RoHS Compliant Compliant
Lead-Free Yes —
Aras MSL [DATA_NEEDED: MSL moisture sensitivity level] —
Configuration Single N-channel —
Part Number — IPT012N08N5ATMA1
Channel Type — N-Channel
Drain-Source Voltage (VDS) Max — 80 V
Continuous Drain Current (ID, TC) — 300 A
Pulsed Drain Current (IDM) — 400 A
On-Resistance RDS(on) Max — 1.2 mOhm
Total Gate Charge QG — 208 nC
Gate-to-Drain Charge QGD — 178 nC
Power Dissipation (PD, TC) — 375 W
Qualification — JEDEC JESD47, JESD22, J-STD-020 (industrial)

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