IPT067N20NM6ATMA1 vs IPTG025N15NM6ATMA1 Perbandingan

Perbandingan bersamaan detil IPT067N20NM6ATMA1 dari Infineon dan IPTG025N15NM6ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPT067N20NM6ATMA1 IPTG025N15NM6ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 6 —
Tipe Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 200 V 150 V
Continuous Drain Current (ID) at TA=25C 15.3 A 26 A
Continuous Drain Current (ID) at TC=25C 137 A 264 A (pulsed)
Power Dissipation (PD) at TA=25C 3.8 W 3.8 W
Power Dissipation (PD) at TC=25C 300 W 395 W
Tipe Mounting Surface Mount Surface Mount
Paket PG-HSOF-8-1 (8-pin + exposed tab) PG-HSOG-8-1 (TOLG)
Rentang Suhu Kerja -55C to +150C (junction) -55 C to +175 C (typical for OptiMOS 6)
Technology Trench-gate OptiMOS 6 silicon OptiMOS 6 150 V (N-channel trench)
Gate-Source Voltage (VGS) [DATA_NEEDED: max VGS rating] —
On-Resistance RDS(on) typ [DATA_NEEDED: RDS(on) at VGS=10V] —
Gate Charge (Qg) typ [DATA_NEEDED: total gate charge] —
Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) typical value] —
Status RoHS Compliant Compliant
Lead-Free Yes —
Level MSL [DATA_NEEDED: MSL moisture sensitivity level] —
Configuration Single N-channel —
Polarity / Channel Type — N-Channel
On-State Resistance RDS(on) typ — 2.5 mOhm at VGS=10 V
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage VGS(th) typ — [DATA_NEEDED: VGS(th) value]
Total Gate Charge Qg typ — [DATA_NEEDED: Qg value]
MSL (Moisture Sensitivity Level) — MSL1 (per JEDEC J-STD-020)
Solder Joint Reliability — Excellent - 30% smaller footprint than D2PAK

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon