IPT067N20NM6ATMA1 vs IPTG025N15NM6ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPT067N20NM6ATMA1 disebabkan oleh Infineon dan IPTG025N15NM6ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPT067N20NM6ATMA1 IPTG025N15NM6ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 6 —
Jenis Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 200 V 150 V
Continuous Drain Current (ID) at TA=25C 15.3 A 26 A
Continuous Drain Current (ID) at TC=25C 137 A 264 A (pulsed)
Power Dissipation (PD) at TA=25C 3.8 W 3.8 W
Power Dissipation (PD) at TC=25C 300 W 395 W
Jenis Pemasangan Surface Mount Surface Mount
Kemasan PG-HSOF-8-1 (8-pin + exposed tab) PG-HSOG-8-1 (TOLG)
Gambaran Suhu Operasi -55C to +150C (junction) -55 C to +175 C (typical for OptiMOS 6)
Technology Trench-gate OptiMOS 6 silicon OptiMOS 6 150 V (N-channel trench)
Gate-Source Voltage (VGS) [DATA_NEEDED: max VGS rating] —
On-Resistance RDS(on) typ [DATA_NEEDED: RDS(on) at VGS=10V] —
Gate Charge (Qg) typ [DATA_NEEDED: total gate charge] —
Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) typical value] —
Status RoHS Compliant Compliant
Lead-Free Yes —
Aras MSL [DATA_NEEDED: MSL moisture sensitivity level] —
Configuration Single N-channel —
Polarity / Channel Type — N-Channel
On-State Resistance RDS(on) typ — 2.5 mOhm at VGS=10 V
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage VGS(th) typ — [DATA_NEEDED: VGS(th) value]
Total Gate Charge Qg typ — [DATA_NEEDED: Qg value]
MSL (Moisture Sensitivity Level) — MSL1 (per JEDEC J-STD-020)
Solder Joint Reliability — Excellent - 30% smaller footprint than D2PAK

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