IQD009N06NM5SCATMA1 vs IPD50N06S409ATMA2 Perbandingan

Perbandingan bersamaan detil IQD009N06NM5SCATMA1 dari Infineon dan IPD50N06S409ATMA2 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IQD009N06NM5SCATMA1 IQD009N06NM5SCATMA1 - 60V 0.9mOhm N-Ch MOSFET | Infineon

IQD009N06NM5SCATMA1 - 60V 0.9mOhm N-Ch MOSFET | Infineon

IQD009N06NM5SCATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IQD009N06NM5SCATMA1 IPD50N06S409ATMA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Series OptiMOS 5 60V (IQD009N06NM5) —
Polarity / Channel Type N-Channel Enhancement Mode —
Drain-Source Voltage (VDS) 60 V 60 V
Continuous Drain Current (ID, Ta=25C) 42 A —
Pulsed Drain Current (IDM, Tc) 445 A —
On-Resistance RDS(on) max @ VGS=10V 0.9 mOhm —
Power Dissipation (Ta) 3 W —
Power Dissipation (Tc) 333 W —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS abs max, typical +/-20V] [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th) value] [DATA_NEEDED: VGS(th) typical]
Paket PG-WHSON-8-U02 (PQFN 5x6 mm) PG-TO252-3-11 (DPAK)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja [DATA_NEEDED: Tj min/max] —
Status RoHS Compliant Compliant
Level MSL [DATA_NEEDED: MSL classification] —
Tape and Reel Packaging Yes (suffix SCATMA1) —
Technology — N-Channel MOSFET (OptiMOS)
Continuous Drain Current (ID) at Tc — 50 A
On-Resistance R<sub>DS(on)</sub> max at VGS=10V — 9 mΩ
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typical]
Power Dissipation (Pd) at Tc — 71 W
Suhu Hubung Kerja — -55 °C to +175 °C
Jumlah Pin — 3 (2 + Tab)
Automotive Qualification — AEC-Q101
Lead-Free / Halogen-Free — [DATA_NEEDED]

Spek dan Sumber

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