IQD009N06NM5SCATMA1 vs IPD50N06S409ATMA2 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IQD009N06NM5SCATMA1 disebabkan oleh Infineon dan IPD50N06S409ATMA2 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IQD009N06NM5SCATMA1 IQD009N06NM5SCATMA1 - 60V 0.9mOhm N-Ch MOSFET | Infineon

IQD009N06NM5SCATMA1 - 60V 0.9mOhm N-Ch MOSFET | Infineon

IQD009N06NM5SCATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IQD009N06NM5SCATMA1 IPD50N06S409ATMA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Series OptiMOS 5 60V (IQD009N06NM5) —
Polarity / Channel Type N-Channel Enhancement Mode —
Drain-Source Voltage (VDS) 60 V 60 V
Continuous Drain Current (ID, Ta=25C) 42 A —
Pulsed Drain Current (IDM, Tc) 445 A —
On-Resistance RDS(on) max @ VGS=10V 0.9 mOhm —
Power Dissipation (Ta) 3 W —
Power Dissipation (Tc) 333 W —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS abs max, typical +/-20V] [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th) value] [DATA_NEEDED: VGS(th) typical]
Kemasan PG-WHSON-8-U02 (PQFN 5x6 mm) PG-TO252-3-11 (DPAK)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi [DATA_NEEDED: Tj min/max] —
Status RoHS Compliant Compliant
Aras MSL [DATA_NEEDED: MSL classification] —
Tape and Reel Packaging Yes (suffix SCATMA1) —
Technology — N-Channel MOSFET (OptiMOS)
Continuous Drain Current (ID) at Tc — 50 A
On-Resistance R<sub>DS(on)</sub> max at VGS=10V — 9 mΩ
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typical]
Power Dissipation (Pd) at Tc — 71 W
Suhu Hubungan Operasi — -55 °C to +175 °C
Kiraan Pin — 3 (2 + Tab)
Automotive Qualification — AEC-Q101
Lead-Free / Halogen-Free — [DATA_NEEDED]

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