IQDH35N03LM5SCATMA1 vs IQDH88N06LM5ATMA1 Perbandingan
Perbandingan bersamaan detil IQDH35N03LM5SCATMA1 dari Infineon dan IQDH88N06LM5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IQDH35N03LM5SCATMA1 - 30V 700A N-Ch OptiMOS 5 MOSFET | Infineon
IQDH35N03LM5SCATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IQDH35N03LM5SCATMA1 | IQDH88N06LM5ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Tipe Transistor | N-Channel MOSFET | — |
| Technology | OptiMOS 5 (trench, shielded-gate) | OptiMOS 5 (trench) |
| Drain-Source Voltage (VDS) max | 30 V | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Continuous Drain Current (ID) at Ta | 66 A | — |
| Pulsed Drain Current (IDM) at Tc | 700 A | — |
| On-State Resistance (RDS(on)) max | 0.35 mOhm @ VGS=10V | — |
| Power Dissipation (PD) at Ta | 2.5 W | 3 W |
| Power Dissipation (PD) at Tc | 278 W | 333 W |
| Paket | PG-WHSON-8-U02 (PQFN 5x6 Source-Down, 8-pin) | PG-TSON-8-9 (PQFN 5x6) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | -55 C to +175 C | [DATA_NEEDED: TJ max] |
| Level MSL | 1 (unlimited) | [DATA_NEEDED: MSL rating] |
| Status RoHS | Compliant | Compliant |
| Marking | IQDH35N03LM5S | — |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Gate-to-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| Drain Current (ID) Continuous at Ta | — | 42 A |
| Drain Current (ID) Continuous at Tc | — | 447 A |
| RDS(on) Max at VGS=10V | — | 0.86 mOhm |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Series | — | OptiMOS 5 |