IQDH88N06LM5CGSCATMA1 vs IQE031N08LM6CGSCATMA1 Perbandingan
Perbandingan bersamaan detil IQDH88N06LM5CGSCATMA1 dari Infineon dan IQE031N08LM6CGSCATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IQE031N08LM6CGSCATMA1 - 80V OptiMOS 6 N-Ch MOSFET 127A | Infineon
IQE031N08LM6CGSCATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IQDH88N06LM5CGSCATMA1 | IQE031N08LM6CGSCATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Transistor | N-Channel MOSFET | — |
| Technology | OptiMOS 5 (trench) | — |
| Drain-Source Voltage (V(BR)DSS) | 60 V | — |
| Continuous Drain Current (Ta=25°C) | 42 A | — |
| Arus Alir Berlanjut (TC=25°C) | 447 A | — |
| On-Resistance RDS(on) typical @ VGS=10V | 0.86 mΩ | — |
| Power Dissipation (Ta=25°C) | 3 W | — |
| Dissipasi Listrik (TC=25°C) | 333 W | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical] | — |
| Gate Charge Qg typical | [DATA_NEEDED: Qg typical nC] | — |
| Rentang Suhu Kerja | -55°C to +175°C (TJ) | -55 C to +175 C (junction, typical for OptiMOS 6) |
| Paket | PG-WHTFN-9-U02 (PQFN 5x6) | PG-WHTFN-9 (PQFN 3.3x3.3 Source-Down Center-Gate) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Jumlah Pin | 9 (with exposed pad) | — |
| Cooling | Dual-side cooling capable | — |
| Level MSL | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020, typical for Infineon PQFN) |
| Status RoHS | Compliant | Compliant |
| Polarity | N-Channel | — |
| Configuration | Single | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 6 (40 V to 100 V) |
| Polarity / Channel Type | — | N-Channel |
| Drain-to-Source Voltage (VDS max) | — | 80 V |
| Continuous Drain Current (ID) at Ta=25C | — | 18 A |
| Continuous Drain Current (ID) at Tc | — | 127 A |
| Power Dissipation (PD) at Ta=25C | — | 2.5 W |
| Power Dissipation (PD) at Tc | — | 125 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| On-State Resistance RDS(on) max | — | [DATA_NEEDED: RDS(on) at VGS=10 V] |
| Gate Drive Level | — | Logic-level |
| Avalanche Tested | — | 100% avalanche tested |
| Lead-Free | — | Yes |