IQDH88N06LM5CGSCATMA1 vs IQE031N08LM6CGSCATMA1 比較
詳細並排比較 IQDH88N06LM5CGSCATMA1 由 Infineon 與 IQE031N08LM6CGSCATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
IQE031N08LM6CGSCATMA1 - 80V OptiMOS 6 N-Ch MOSFET 127A | Infineon
IQE031N08LM6CGSCATMA1 ✓ 啟用中規格比較
| 參數 | IQDH88N06LM5CGSCATMA1 | IQE031N08LM6CGSCATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 電晶體類型 | N-Channel MOSFET | — |
| Technology | OptiMOS 5 (trench) | — |
| Drain-Source Voltage (V(BR)DSS) | 60 V | — |
| Continuous Drain Current (Ta=25°C) | 42 A | — |
| 連續汲極電流 (TC=25°C) | 447 A | — |
| On-Resistance RDS(on) typical @ VGS=10V | 0.86 mΩ | — |
| Power Dissipation (Ta=25°C) | 3 W | — |
| 功率耗散 (TC=25°C) | 333 W | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical] | — |
| Gate Charge Qg typical | [DATA_NEEDED: Qg typical nC] | — |
| 工作溫度範圍 | -55°C to +175°C (TJ) | -55 C to +175 C (junction, typical for OptiMOS 6) |
| 封裝 | PG-WHTFN-9-U02 (PQFN 5x6) | PG-WHTFN-9 (PQFN 3.3x3.3 Source-Down Center-Gate) |
| 安裝類型 | Surface Mount | Surface Mount |
| 腳位數 | 9 (with exposed pad) | — |
| Cooling | Dual-side cooling capable | — |
| MSL 等級 | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020, typical for Infineon PQFN) |
| RoHS 狀態 | Compliant | Compliant |
| Polarity | N-Channel | — |
| Configuration | Single | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 6 (40 V to 100 V) |
| Polarity / Channel Type | — | N-Channel |
| Drain-to-Source Voltage (VDS max) | — | 80 V |
| Continuous Drain Current (ID) at Ta=25C | — | 18 A |
| Continuous Drain Current (ID) at Tc | — | 127 A |
| Power Dissipation (PD) at Ta=25C | — | 2.5 W |
| Power Dissipation (PD) at Tc | — | 125 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| On-State Resistance RDS(on) max | — | [DATA_NEEDED: RDS(on) at VGS=10 V] |
| Gate Drive Level | — | Logic-level |
| Avalanche Tested | — | 100% avalanche tested |
| Lead-Free | — | Yes |