IQE020N04LM6CGSCATMA1 vs ISZ230N10NM6ATMA1 Perbandingan
Perbandingan bersamaan detil IQE020N04LM6CGSCATMA1 dari Infineon dan ISZ230N10NM6ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IQE020N04LM6CGSCATMA1 - 40V OptiMOS 6 2.0mΩ N-MOSFET, PG-WHTFN-9
IQE020N04LM6CGSCATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IQE020N04LM6CGSCATMA1 | ISZ230N10NM6ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Part Family | OptiMOS 6 low-voltage power MOSFET | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | 100 V |
| Continuous Drain Current at TA=25°C | 25 A | — |
| Continuous Drain Current at TC=25°C | 166 A | — |
| Maximum RDS(on) | 2.0 mΩ (per IQE part-number decode) | — |
| Power Dissipation at TA=25°C | 2.5 W | — |
| Power Dissipation at TC=25°C | 107 W | — |
| Paket | PG-WHTFN-9-1 (PQFN 3.3 x 3.3 mm Source-Down dual-side cooled) | PG-TSDSON-8 FL (3.3 x 3.3 mm) |
| Jumlah Pin | 9 | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | -55 °C to +150 °C (junction, per Infineon MOSFET convention) | -55 °C to +150 °C (junction) |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Level MSL | 1 (per JEDEC J-STD-020 for similar PQFN MOSFETs) | MSL1 (per JEDEC J-STD-020) |
| Technology | OptiMOS 6 trench | OptiMOS 6 trench MOSFET |
| Polarity / Channel Type | — | N-Channel |
| Continuous Drain Current (Ta) | — | 7.7 A |
| Continuous Drain Current (Tc) | — | 31 A |
| Power Dissipation (Ta) | — | 3 W |
| Power Dissipation (Tc) | — | 48 W |
| On-Resistance RDS(on) at VGS=10V | — | 23 mΩ (typ, ID=10A) |
| Gate Threshold Voltage VGS(th) | — | 3.3 V (typ at 13 µA) |
| Gate Drive Voltage (recommended) | — | 10 V |
| Family | — | OptiMOS 6 (100V class) |