IQE036N08NM6ATMA1 vs IAUCN10S5L280DATMA1 Perbandingan
Perbandingan bersamaan detil IQE036N08NM6ATMA1 dari Infineon dan IAUCN10S5L280DATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IAUCN10S5L280DATMA1 - 100V Dual N-Ch OptiMOS 5 MOSFET | Infineon
IAUCN10S5L280DATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IQE036N08NM6ATMA1 | IAUCN10S5L280DATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 | OptiMOS 5 |
| FET Type | N-Channel | — |
| Drain-to-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID) at Ta | 16.7 A | — |
| Continuous Drain Current (ID) at Tc | 118 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) max at VGS=10V | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| On-Resistance RDS(on) typical | 3.6 mΩ | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical] | — |
| Power Dissipation at Ta | 2.5 W | — |
| Power Dissipation at Tc | 125 W | — |
| Paket | PG-TSON-8-5 (PQFN 3.3x3.3 Source-Down) | PG-TDSON-8-61 (SSO8) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | -55°C to +150°C (junction, per datasheet) | -55C to +175C (junction) |
| Status RoHS | Compliant | Compliant |
| Level MSL | MSL1 (per JEDEC J-STD-020) | 1 |
| Avalanche Energy Rated | Yes (single-pulse, per datasheet) | — |
| Configuration | — | Dual N-Channel MOSFET Array |
| Drain-Source Voltage (Vds) | — | 100 V |
| Continuous Drain Current (Id) at Tj | — | 23 A |
| Power Dissipation (Pd) at Tc | — | 38 W |
| Automotive Qualified | — | Yes (AEC-Q101, IAU prefix) |
| Technology | — | OptiMOS 5 Trench MOSFET |
| Jumlah Pin | — | 8 |
| Packing | — | Tape & Reel (T&R) |