IQE036N08NM6ATMA1 vs IAUCN10S5L280DATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IQE036N08NM6ATMA1 disebabkan oleh Infineon dan IAUCN10S5L280DATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IAUCN10S5L280DATMA1 - 100V Dual N-Ch OptiMOS 5 MOSFET | Infineon
IAUCN10S5L280DATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IQE036N08NM6ATMA1 | IAUCN10S5L280DATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 | OptiMOS 5 |
| FET Type | N-Channel | — |
| Drain-to-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID) at Ta | 16.7 A | — |
| Continuous Drain Current (ID) at Tc | 118 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) max at VGS=10V | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| On-Resistance RDS(on) typical | 3.6 mΩ | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical] | — |
| Power Dissipation at Ta | 2.5 W | — |
| Power Dissipation at Tc | 125 W | — |
| Kemasan | PG-TSON-8-5 (PQFN 3.3x3.3 Source-Down) | PG-TDSON-8-61 (SSO8) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Gambaran Suhu Operasi | -55°C to +150°C (junction, per datasheet) | -55C to +175C (junction) |
| Status RoHS | Compliant | Compliant |
| Aras MSL | MSL1 (per JEDEC J-STD-020) | 1 |
| Avalanche Energy Rated | Yes (single-pulse, per datasheet) | — |
| Configuration | — | Dual N-Channel MOSFET Array |
| Drain-Source Voltage (Vds) | — | 100 V |
| Continuous Drain Current (Id) at Tj | — | 23 A |
| Power Dissipation (Pd) at Tc | — | 38 W |
| Automotive Qualified | — | Yes (AEC-Q101, IAU prefix) |
| Technology | — | OptiMOS 5 Trench MOSFET |
| Kiraan Pin | — | 8 |
| Packing | — | Tape & Reel (T&R) |