IQE050N08NM5CGSCATMA1 vs IQEH50NE2LM7UCGSCATMA1 Perbandingan
Perbandingan bersamaan detil IQE050N08NM5CGSCATMA1 dari Infineon dan IQEH50NE2LM7UCGSCATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IQE050N08NM5CGSCATMA1 - 80V 99A OptiMOS 5 N-Channel MOSFET | Infineon
IQE050N08NM5CGSCATMA1 ✓ AktifInfineon
IQEH50NE2LM7UCGSCATMA1 - 25V OptiMOS 7 N-Ch MOSFET | Infineon
IQEH50NE2LM7UCGSCATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IQE050N08NM5CGSCATMA1 | IQEH50NE2LM7UCGSCATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 (trench) | Silicon N-Channel Power MOSFET |
| Drain-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID) at TC | 99 A | 422 A |
| Continuous Drain Current (ID) at TA | 16 A | 54 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) max at VGS=10V | 5.0 mOhm | — |
| Gate Threshold Voltage VGS(th) typ | 3.8 V | — |
| Gate Charge Qg typ | [DATA_NEEDED: total gate charge] | — |
| Total Power Dissipation at TC (PD) | 100 W | — |
| Total Power Dissipation at TA (PD) | 2.5 W | — |
| Rentang Suhu Kerja | -55C to +175C (junction, typical) | — |
| Paket | PG-WHTFN-9-1 (Source-Down) | PG-WHTFN-9-1 (surface mount) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Lead-Free / RoHS | Lead-free, RoHS compliant | — |
| Level MSL | 1 | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 7 Power-Transistor |
| Tipe Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) Max | — | 25 V |
| RDS(on) Max | — | 0.5 mΩ |
| Gate Threshold Voltage (VGS(th)) typ | — | 2 V |
| Power Dissipation (PD) at TA | — | 2.5 W |
| Power Dissipation (PD) at TC | — | 150 W |
| Maximum Junction Temperature | — | 175 °C |
| Series | — | OptiMOS 7 |