IQE050N08NM5CGSCATMA1 vs IQEH50NE2LM7UCGSCATMA1 比較
詳細並排比較 IQE050N08NM5CGSCATMA1 由 Infineon 與 IQEH50NE2LM7UCGSCATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
IQE050N08NM5CGSCATMA1 - 80V 99A OptiMOS 5 N-Channel MOSFET | Infineon
IQE050N08NM5CGSCATMA1 ✓ 啟用中規格比較
| 參數 | IQE050N08NM5CGSCATMA1 | IQEH50NE2LM7UCGSCATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 (trench) | Silicon N-Channel Power MOSFET |
| Drain-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID) at TC | 99 A | 422 A |
| Continuous Drain Current (ID) at TA | 16 A | 54 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) max at VGS=10V | 5.0 mOhm | — |
| Gate Threshold Voltage VGS(th) typ | 3.8 V | — |
| Gate Charge Qg typ | [DATA_NEEDED: total gate charge] | — |
| Total Power Dissipation at TC (PD) | 100 W | — |
| Total Power Dissipation at TA (PD) | 2.5 W | — |
| 工作溫度範圍 | -55C to +175C (junction, typical) | — |
| 封裝 | PG-WHTFN-9-1 (Source-Down) | PG-WHTFN-9-1 (surface mount) |
| 安裝類型 | Surface Mount | Surface Mount |
| Lead-Free / RoHS | Lead-free, RoHS compliant | — |
| MSL 等級 | 1 | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 7 Power-Transistor |
| 電晶體類型 | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) Max | — | 25 V |
| RDS(on) Max | — | 0.5 mΩ |
| Gate Threshold Voltage (VGS(th)) typ | — | 2 V |
| Power Dissipation (PD) at TA | — | 2.5 W |
| Power Dissipation (PD) at TC | — | 150 W |
| Maximum Junction Temperature | — | 175 °C |
| Series | — | OptiMOS 7 |