IQE050N08NM5CGSCATMA1 vs IQEH50NE2LM7UCGSCATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IQE050N08NM5CGSCATMA1 disebabkan oleh Infineon dan IQEH50NE2LM7UCGSCATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IQEH50NE2LM7UCGSCATMA1 IQEH50NE2LM7UCGSCATMA1 - 25V OptiMOS 7 N-Ch MOSFET | Infineon

IQEH50NE2LM7UCGSCATMA1 - 25V OptiMOS 7 N-Ch MOSFET | Infineon

IQEH50NE2LM7UCGSCATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IQE050N08NM5CGSCATMA1 IQEH50NE2LM7UCGSCATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology OptiMOS 5 (trench) Silicon N-Channel Power MOSFET
Drain-Source Voltage (VDS) 80 V —
Continuous Drain Current (ID) at TC 99 A 422 A
Continuous Drain Current (ID) at TA 16 A 54 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance RDS(on) max at VGS=10V 5.0 mOhm —
Gate Threshold Voltage VGS(th) typ 3.8 V —
Gate Charge Qg typ [DATA_NEEDED: total gate charge] —
Total Power Dissipation at TC (PD) 100 W —
Total Power Dissipation at TA (PD) 2.5 W —
Gambaran Suhu Operasi -55C to +175C (junction, typical) —
Kemasan PG-WHTFN-9-1 (Source-Down) PG-WHTFN-9-1 (surface mount)
Jenis Pemasangan Surface Mount Surface Mount
Lead-Free / RoHS Lead-free, RoHS compliant —
Aras MSL 1 —
Manufacturer — Infineon Technologies
Product Family — OptiMOS 7 Power-Transistor
Jenis Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) Max — 25 V
RDS(on) Max — 0.5 mΩ
Gate Threshold Voltage (VGS(th)) typ — 2 V
Power Dissipation (PD) at TA — 2.5 W
Power Dissipation (PD) at TC — 150 W
Maximum Junction Temperature — 175 °C
Series — OptiMOS 7

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