IQE220N15NM5SCATMA1 vs IQE220N15NM5ATMA1 Perbandingan

Perbandingan bersamaan detil IQE220N15NM5SCATMA1 dari Infineon dan IQE220N15NM5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IQE220N15NM5ATMA1 IQE220N15NM5ATMA1 - 150V N-Ch OptiMOS 5 MOSFET | Infineon

IQE220N15NM5ATMA1 - 150V N-Ch OptiMOS 5 MOSFET | Infineon

IQE220N15NM5ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IQE220N15NM5SCATMA1 IQE220N15NM5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology OptiMOS 5 (Trench >=100V) Trench MOSFET (OptiMOS 5)
Drain-Source Voltage (VDS) 150 V —
Continuous Drain Current (ID) at Ta 7 A 7 A
Continuous Drain Current (ID) at Tc 44 A 44 A
On-State Resistance (RDS(on)) max 22 mOhm —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 100 W —
Gate-Source Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] —
Gate Charge (Qg) [DATA_NEEDED: Qg total] —
Paket PG-WHSON-8-1 (Source-Down) PG-TSON-8-5 (Source-Down)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55C to +150C (junction) —
Jumlah Pin 8 —
Level MSL 1 1
Status RoHS Compliant Compliant
Avalanche Rated Yes —
Configuration Single —
Manufacturer — Infineon Technologies
Product Family — OptiMOS 5 Power-Transistor
Polarity / Channel Type — N-Channel
Drain-Source Voltage (VDS) Max — 150 V
Power Dissipation (PD) at Ta — 2.5 W
Power Dissipation (PD) at Tc — 100 W
RDS(on) Max at VGS=10V — 22 mΩ
Gate Threshold Voltage (VGS(th)) — 4.6 V (typ at 46 µA)
Total Gate Charge (Qg) — 14.4 nC at 10 V
Input Capacitance (Ciss) — 14 pF
Output Capacitance (Coss) — 340 pF
Konfigurasi Output — Single N-Channel
Suhu Kerja — -55C to +150C (junction)

Spek dan Sumber

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