IQE220N15NM5SCATMA1 vs IQE220N15NM5ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IQE220N15NM5SCATMA1 disebabkan oleh Infineon dan IQE220N15NM5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IQE220N15NM5ATMA1 IQE220N15NM5ATMA1 - 150V N-Ch OptiMOS 5 MOSFET | Infineon

IQE220N15NM5ATMA1 - 150V N-Ch OptiMOS 5 MOSFET | Infineon

IQE220N15NM5ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IQE220N15NM5SCATMA1 IQE220N15NM5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology OptiMOS 5 (Trench >=100V) Trench MOSFET (OptiMOS 5)
Drain-Source Voltage (VDS) 150 V —
Continuous Drain Current (ID) at Ta 7 A 7 A
Continuous Drain Current (ID) at Tc 44 A 44 A
On-State Resistance (RDS(on)) max 22 mOhm —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 100 W —
Gate-Source Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] —
Gate Charge (Qg) [DATA_NEEDED: Qg total] —
Kemasan PG-WHSON-8-1 (Source-Down) PG-TSON-8-5 (Source-Down)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55C to +150C (junction) —
Bilangan Pin 8 —
Aras MSL 1 1
Status RoHS Compliant Compliant
Avalanche Rated Yes —
Configuration Single —
Manufacturer — Infineon Technologies
Product Family — OptiMOS 5 Power-Transistor
Polarity / Channel Type — N-Channel
Drain-Source Voltage (VDS) Max — 150 V
Power Dissipation (PD) at Ta — 2.5 W
Power Dissipation (PD) at Tc — 100 W
RDS(on) Max at VGS=10V — 22 mΩ
Gate Threshold Voltage (VGS(th)) — 4.6 V (typ at 46 µA)
Total Gate Charge (Qg) — 14.4 nC at 10 V
Input Capacitance (Ciss) — 14 pF
Output Capacitance (Coss) — 340 pF
Konfigurasi Output — Single N-Channel
Suhu Operasi — -55C to +150C (junction)

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